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Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz

Release Time:2021-11-30| Hits:

Title of Paper:Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz

Journal:2020 Device Research Conference (DRC)

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Lars Gundlach,Jie Zhang,Guangyang Lin,Meng Jia

Translation or Not:No

Date of Publication:2020-06

Release Time:2021-11-30

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