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Paper Publications
Enhanced Electrical Performance of Forming Gas Annealed InAlN/GaN HEMTs on Silicon with fT /fmax of 165/165 GHz
  • Journal:
    2020 Device Research Conference (DRC)
  • All the Authors:
    Meng Jia,Guangyang Lin,Jie Zhang,Lars Gundlach
  • First Author:
    Peng Cui
  • Correspondence Author:
    Yuping Zeng
  • Translation or Not:
    no
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