CIrNYXa68zaHbNgSAXkEQqGKTLpyriSwSPyZHSKSGJOUJSRY7MyGLFpKZlDW

Paper Publications

Home >> Scientific Research >> Paper Publications

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Release Time:2021-11-29| Hits:

Title of Paper:Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Journal:Scientific Reports

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Yuanjie Lv,Huan Liu,Aijie Cheng,Chen Fu

Volume:8

Page Number:983

DOI Number:10.1038/s41598-018-19510-y

Translation or Not:No

Date of Publication:2018-01

Included Journals:SCI

Release Time:2021-11-29

Prev One:
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
Next One:
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --