Title of Paper:Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Journal:Superlattices and Microstructures

First Author:Chen Fu

Correspondence Author:Zhaojun Lin

All the Authors:Yan Liu,Peng Cui,Yuanjie Lv,Yang Zhou,Gang Dai,Chongbiao Luan

Volume:111

Page Number:806

DOI Number:10.1016/j.spmi.2017.07.040

Translation or Not:No

Date of Publication:2017-11

Included Journals:SCI

Release Time:2021-11-29