Gehbcpjq0nck9ILqvumD3gQfAYfswv9ZLF1f8v6PvDu49ZQMG5EEuwELosOh

Paper Publications

Home >> Scientific Research >> Paper Publications

A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Journal:Superlattices and Microstructures

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Chen Fu,Yan Liu,Yuanjie Lv

Volume:110

Page Number:289

DOI Number:10.1016/j.spmi.2017.08.030

Translation or Not:No

Date of Publication:2017-08

Included Journals:SCI

Release Time:2021-11-29

Prev One:
Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
Next One:
Study of Polarization Coulomb Field Scattering Influence on Improved Linearity in AlGaN/GaN Heterostructure Field-Effect Transistors

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --