Paper Publications
Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
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Journal:
AIP Advances
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All the Authors:
Peng Cui,Jingtao Zhao,Chen Fu,Ming Yang,Yuanjie Lv
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First Author:
Yan Liu
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Indexed by:
Journal paper
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Correspondence Author:
Zhaojun Lin
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Volume:
7
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Page Number:
085309
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Translation or Not:
no
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Included Journals:
SCI