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Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal:AIP Advances

First Author:Yan Liu

Correspondence Author:Zhaojun Lin

All the Authors:Yuanjie Lv,Ming Yang,Chen Fu,Jingtao Zhao,Peng Cui

Volume:7

Page Number:085309

DOI Number:10.1063/1.4999442

Translation or Not:No

Date of Publication:2017-08

Included Journals:SCI

Release Time:2021-11-29

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