Paper Publications
Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
  • Journal:
    AIP Advances
  • All the Authors:
    Peng Cui,Jingtao Zhao,Chen Fu,Ming Yang,Yuanjie Lv
  • First Author:
    Yan Liu
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    7
  • Page Number:
    085309
  • Translation or Not:
    no
  • Included Journals:
    SCI
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