Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Journal:
Chinese Physics B
All the Authors:
Zhaojun Lin,Chen Fu,Yan Liu,YuanJie Lv
First Author:
Peng Cui
Volume:
26
Issue:
12
Page Number:
127102
Translation or Not:
no
Included Journals:
SCI
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