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Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Effect of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

Journal:Chinese Physics B

First Author:Peng Cui

All the Authors:Zhaojun Lin,Chen Fu,Yan Liu,YuanJie Lv

Volume:26

Issue:12

Page Number:127102

DOI Number:10.1088/1674-1056/26/12/127102

Translation or Not:No

Date of Publication:2017-06

Included Journals:SCI

Release Time:2021-11-29

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