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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Release Time:2021-11-29| Hits:

Title of Paper:Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Journal:IEEE Transactions on Electron Devices

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Chongbiao Luan,Yuanjie Lv,Chen Fu,Yan Liu,Ming Yang,Aijie Cheng,Wei Lin,Huan Liu

Volume:64

Issue:3

Page Number:1038

DOI Number:10.1109/TED.2017.2654262

Translation or Not:No

Date of Publication:2017-03

Included Journals:SCI

Release Time:2021-11-29

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