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Paper Publications
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
  • Journal:
    IEEE Transactions on Electron Devices
  • All the Authors:
    Huan Liu,Wei Lin,Aijie Cheng,Ming Yang,Yan Liu,Chen Fu,Yuanjie Lv,Chongbiao Luan
  • First Author:
    Peng Cui
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    64
  • Issue:
    3
  • Page Number:
    1038
  • Translation or Not:
    no
  • Included Journals:
    SCI
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