Title of Paper:Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment
Journal:Journal of Physics D: Applied Physics
First Author:Guangyang Lin
Correspondence Author:Yuping Zeng
All the Authors:AT Charlie Johnson,Xiaoshan Liu,Lars Gundlach,Jie Zhang,Haochen Zhao,Peng Cui,Meng Jia,Meng-Qiang Zhao
Volume:53
Issue:41
Page Number:415106
DOI Number:10.1088/1361-6463/ab9ad8
Translation or Not:No
Date of Publication:2020-07
Included Journals:SCI
Release Time:2021-11-29
