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Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis (trifluoromethane) sulfonamide treatment
  • Journal:
    Journal of Physics D: Applied Physics
  • All the Authors:
    Meng-Qiang Zhao,Meng Jia,Peng Cui,Haochen Zhao,Jie Zhang,Lars Gundlach,Xiaoshan Liu,AT Charlie Johnson
  • First Author:
    Guangyang Lin
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    53
  • Issue:
    41
  • Page Number:
    415106
  • Translation or Not:
    no
  • Included Journals:
    SCI
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