LWvi1paa4B0azh3qEw2WYRLk4fWqeWczCK7zrNE2Tgk7I6wYTynMn5kdVLgx

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High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

Release Time:2021-11-29| Hits:

Title of Paper:High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric

Journal:Applied Physics Express

First Author:Jie Zhang

Correspondence Author:Yuping Zeng

All the Authors:Peng Cui,Guangyang Lin,Yuying Zhang,Maria Gabriela Sales,Meng Jia,Zhengxin Li,Christopher Goodwin,Thomas Beebe,Lars Gundlach,Chaoying Ni,Stephen McDonnell

Volume:12

Issue:9

Page Number:096502

DOI Number:10.7567/1882-0786/ab3690

Translation or Not:No

Date of Publication:2019-08

Included Journals:SCI

Release Time:2021-11-29

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