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High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

Release Time:2021-11-27| Hits:

Title of Paper:High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

Journal:Applied Physics Express

Note:(Reported by Semiconductor Today http://www.semiconductor-today.com/features/PDF/semiconductor-today-october-2019-High-frequency.pdf)

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Andrew Mercante,Guangyang Lin,Jie Zhang,Peng Yao,Dennis W Prather

Volume:12

Issue:10

Page Number:104001

DOI Number:10.7567/1882-0786/ab3e29

Translation or Not:No

Date of Publication:2019-09

Included Journals:SCI

Release Time:2021-11-27

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