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High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg
  • Journal:
    Applied Physics Express
  • Note:
    (Reported by Semiconductor Today http://www.semiconductor-today.com/features/PDF/semiconductor-today-october-2019-High-frequency.pdf)
  • All the Authors:
    Andrew Mercante,Guangyang Lin,Jie Zhang,Peng Yao,Dennis W Prather
  • First Author:
    Peng Cui
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    12
  • Issue:
    10
  • Page Number:
    104001
  • Translation or Not:
    no
  • Included Journals:
    SCI
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