HNiuKhnh9ZdVm5MC1UAgu9sLjsergHXOGTSO200KZK72GOremJGHkkzLGIWK

Paper Publications

Home >> Scientific Research >> Paper Publications

The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Release Time:2021-11-29| Hits:

Title of Paper:The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation

Journal:Applied Physics A

First Author:Chen Fu

Correspondence Author:Zhaojun Lin

All the Authors:Peng Cui,Yuanjie Lv,Yang Zhou,Gang Dai,Chongbiao Luan,Huan Liu,Aijie Cheng

Volume:124

Page Number:299

DOI Number:10.1007/s00339-018-1702-6

Translation or Not:No

Date of Publication:2018-03

Included Journals:SCI

Release Time:2021-11-29

Prev One:
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
Next One:
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --