Paper Publications
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
  • Journal:
    Applied physics A-Materials Science & Processing
  • All the Authors:
    Zhaojun Lin,Chen Fu,Yan Liu,Yuanjie Lv
  • First Author:
    Peng Cui
  • Volume:
    123
  • Page Number:
    359
  • Translation or Not:
    no
  • Included Journals:
    SCI
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