Paper Publications
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
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Journal:
Applied physics A-Materials Science & Processing
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All the Authors:
Zhaojun Lin,Chen Fu,Yan Liu,Yuanjie Lv
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First Author:
Peng Cui
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Volume:
123
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Page Number:
359
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Translation or Not:
no
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Included Journals:
SCI