u4FSwNWfKHgpcTywBoJsLJkT0RF0sp05Cqb8GQ6uBDNgYzXA5r7vDp9IwMJd

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Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

Journal:Applied physics A-Materials Science & Processing

First Author:Peng Cui

All the Authors:Zhaojun Lin,Chen Fu,Yan Liu,Yuanjie Lv

Volume:123

Page Number:359

DOI Number:10.1007/s00339-018-1777-0

Translation or Not:No

Date of Publication:2018-04

Included Journals:SCI

Release Time:2021-11-29

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