Title of Paper:A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Journal:Applied Physics Letter

First Author:Jingtao Zhao

Correspondence Author:Zhaojun Lin

All the Authors:Quanyou Chen,Ming Yang,Peng Cui,Yuanjie Lv,Zhihong Feng

Document Code:113502

Volume:107

DOI Number:10.1063/1.4931122

Translation or Not:No

Date of Publication:2015-09

Included Journals:SCI

Release Time:2021-11-29