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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

Release Time:2021-11-29| Hits:

Title of Paper:Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

Journal:Applied physics A-Materials Science & Processing

First Author:Jingtao Zhao

Correspondence Author:Zhaojun Lin

All the Authors:Quanyou Chen,Ming Yang,Peng Cui,Yuanjie Lv,Zhihong Feng

Volume:121

Page Number:1271

DOI Number:10.1007/s00339-015-9504-6

Translation or Not:No

Date of Publication:2015-11

Included Journals:SCI

Release Time:2021-11-29

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