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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes
  • Journal:
    Applied physics A-Materials Science & Processing
  • All the Authors:
    Quanyou Chen,Ming Yang,Peng Cui,Yuanjie Lv,Zhihong Feng
  • First Author:
    Jingtao Zhao
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    121
  • Page Number:
    1271
  • Translation or Not:
    no
  • Included Journals:
    SCI
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