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A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

Release Time:2023-11-10| Hits:

Institution:集成电路学院

Title of Paper:A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

Journal:IEEE Transactions on Electron Devices

First Author:王鸣雁

Document Code:1703670853552254977

Page Number:1-5

Number of Words:3

Translation or Not:No

Date of Publication:2023-01

Release Time:2023-11-10

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Study on the frequency characteristics of split-gate AlGaN/GaN HFETs
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Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

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