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Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Release Time:2022-12-27| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Journal:MICROELECTRONICS JOURNAL

First Author:崔鹏

Document Code:AF538DD88E9340EF99FA18C5BE695D85

Volume:129

Issue:1

Page Number:105602

Number of Words:3500

Translation or Not:No

Date of Publication:2022-11

Release Time:2022-12-27

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