Return Home
Paper Publications
Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT
  • Affiliation of Author(s):
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    王鸣雁
  • Document Code:
    4B0DEB3F96FA4996984DC4990B4D40E1
  • Issue:
    12
  • Number of Words:
    3
  • Translation or Not:
    no
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University