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Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Release Time:2023-11-13| Hits:

Institution:集成电路学院

Title of Paper:Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Journal:IEEE Electron Device Letters

First Author:王鸣雁

Document Code:4B0DEB3F96FA4996984DC4990B4D40E1

Issue:12

Number of Words:3

Translation or Not:No

Date of Publication:2023-10

Release Time:2023-11-13

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Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
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Study on the frequency characteristics of split-gate AlGaN/GaN HFETs

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