Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
SOLID-STATE ELECTRONICS
First Author:
Jiang, Guangyuan
Document Code:
33733E2B9BFF407EB865DA65E98904F1
Volume:
201
Number of Words:
4000
Translation or Not:
no
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