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Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack

Release Time:2024-05-17| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack

Journal:SOLID-STATE ELECTRONICS

First Author:Jiang, Guangyuan

Document Code:33733E2B9BFF407EB865DA65E98904F1

Volume:201

Number of Words:4000

Translation or Not:No

Date of Publication:2023-03

Release Time:2024-05-17

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