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Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

Release Time:2024-05-17| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing

Journal:Solid-State Electronics

First Author:陈思衡

Document Code:1754450306790084609

Volume:213

Number of Words:4000

Translation or Not:No

Date of Publication:2024-03

Release Time:2024-05-17

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