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Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

Release Time:2024-05-17| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors

Journal:Journal of Physics and Chemistry of Solids

First Author:罗鑫

Document Code:1747462737015623682

Volume:187

Number of Words:4000

Translation or Not:No

Date of Publication:2024-04

Release Time:2024-05-17

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Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
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