Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Journal of Physics and Chemistry of Solids
First Author:
罗鑫
Document Code:
1747462737015623682
Volume:
187
Number of Words:
4000
Translation or Not:
no
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