819v6WuJXiAFhDBohc1FMw3HhtGx6V7AerhImLiqjWOvq7jiGBsTnrbnL7yV

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Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Release Time:2024-11-21| Hits:

Institution:集成电路学院

Title of Paper:Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Journal:IEEE ACCESS

First Author:王鸣雁

Document Code:8C0EF47C110A46B4AA20B60BD11A564F

Issue:12

Number of Words:3000

Translation or Not:No

Date of Publication:2024-01

Release Time:2024-11-21

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Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs
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Toward low-power-consumption source-gated phototransistor

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