Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
Affiliation of Author(s):
集成电路学院
Journal:
IEEE ACCESS
First Author:
王鸣雁
Document Code:
8C0EF47C110A46B4AA20B60BD11A564F
Issue:
12
Number of Words:
3000
Translation or Not:
no
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