Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs
Affiliation of Author(s):
集成电路学院
Journal:
Applied Physics Letters
First Author:
王鸣雁
Document Code:
51AD8BC7588A4CD3A8FBDF68C546B47F
Issue:
124
Number of Words:
3000
Translation or Not:
no
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