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Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs

Release Time:2024-11-21| Hits:

Institution:集成电路学院

Title of Paper:Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs

Journal:APPLIED PHYSICS LETTERS

First Author:王鸣雁

Document Code:51AD8BC7588A4CD3A8FBDF68C546B47F

Issue:124

Number of Words:3000

Translation or Not:No

Date of Publication:2024-04

Release Time:2024-11-21

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Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs
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Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

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