vsRpRkAmx4FrbtUrSsrhHTyQLgs5hw90gNsl8Nwptn3arFm2P8vDT6uj1Bz6

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The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode

Release Time:2025-05-24| Hits:

Institution:新一代半导体材料研究院

Title of Paper:The surge current failure and thermal analysis of 4H-SiC Schottky Barrier Diode

Journal:IEEE Transactions on Electron Devices

First Author:张斌

Document Code:1D135EA156254FA1A1F53A2C82506B79

Issue:1

Number of Words:4

Translation or Not:No

Date of Publication:2024-04

Release Time:2025-05-24

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