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High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
  • Affiliation of Author(s):
    新一代半导体材料研究院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    陈思衡
  • Document Code:
    CFFF4E6B36CF438F85A95FA554A9E105
  • Volume:
    12
  • Issue:
    45
  • Page Number:
    2343
  • Number of Words:
    3000
  • Translation or Not:
    no
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