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High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

Release Time:2024-12-19| Hits:

Institution:新一代半导体材料研究院

Title of Paper:High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

Journal:IEEE Electron Device Letters

First Author:陈思衡

Document Code:CFFF4E6B36CF438F85A95FA554A9E105

Volume:12

Issue:45

Page Number:2343

Number of Words:3000

Translation or Not:No

Date of Publication:2024-12

Release Time:2024-12-19

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