Patents
一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法
  • Affilication of Author(s):
    新一代半导体材料研究院
  • Type of Patent:
    发明
  • Application Number:
    202311157957.2
  • Number of Inventors:
    4
  • Service Invention or Not:
    no
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