D6GUvxULLpWL9ZScrFt3C2F7sbVQ3SpM8pCVOjBuRUoID6v4qOgmiwqX2KCw

Patents

Home >> Scientific Research >> Patents

一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法

Release Time:2024-04-16| Hits:

Title:一种SiC MOSFET各部分栅电容及器件沟道电容的精确提取方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202311157957.2

Number of Inventors:4

Service Invention or Not:No

Application Date:2023-09-08

Publication Date:2024-04-05

Authorization Date:2024-04-05

Release Time:2024-04-16

Prev One:
提高InAlN/GaN高电子迁移率晶体管电学性能的方法
Next One:
一种版图结构、半导体器件和其制造方法

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --