Patents
提高InAlN/GaN高电子迁移率晶体管电学性能的方法
  • Affilication of Author(s):
    新一代半导体材料研究院
  • Type of Patent:
    发明
  • Application Number:
    202111558290.8
  • Number of Inventors:
    4
  • Service Invention or Not:
    no
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