Patents
一种基于物理基紧凑型电流电压模型的AlGaN/GaN异质结场效应晶体管优化方法
  • Affilication of Author(s):
    集成电路学院
  • Type of Patent:
    发明
  • Application Number:
    202211682596.9
  • Number of Inventors:
    2
  • Service Invention or Not:
    no
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