LThik9KYj0i0lPKmsuMWeV2NbV7SjZDr7SaamzmoNMx4ViOyp8Z4jHule5PE

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一种基于物理基紧凑型电流电压模型的AlGaN/GaN异质结场效应晶体管优化方法

Release Time:2025-07-11| Hits:

Title:一种基于物理基紧凑型电流电压模型的AlGaN/GaN异质结场效应晶体管优化方法

Institution:集成电路学院

Type of Patent:Invent

Application Number:202211682596.9

Number of Inventors:2

Service Invention or Not:No

Application Date:2022-12-27

Publication Date:2025-05-30

Authorization Date:2025-05-30

Release Time:2025-07-11

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