一种高压平面栅金属-氧化物场效应晶体管及其制造方法方法

Release Time:2025-07-16| Hits:

Title:一种高压平面栅金属-氧化物场效应晶体管及其制造方法方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202510251506.8

Number of Inventors:4

Service Invention or Not:No

Application Date:2025-03-05

Publication Date:2025-05-23

Authorization Date:2025-05-23

Release Time:2025-07-16