Paper Publications

• [16]  邵宏宇. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates.  Journal of Electronic Materials ,  2024. 
• [17]  胡国杰. Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field.  VACUUM,  222,  2024. 
• [18]  胡国杰. Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth.  19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022,  140-142, 2023. 
• [19]  熊希希. 低位错密度8英寸导电型碳化硅单晶衬底制备.  Journal of Inorganic Materials,  1-2, 2023. 
• [20]  田佳奇. Origins and characterization techniques of stress in SiC crystals: A review.  PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,  2024. 
• [21]  王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth.  JOURNAL OF MATERIALS SCIENCE Journal,  2024. 
• [22]  仲光磊. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder.  CrystEng Comm,  7690, 2022. 
• [23]  李华东. Investigation on dislocation and deflection morphology of PVT-grown on-axis 4H-SiC crystals.  Journal of Physics D: Applied Physics,  2022. 
• [24]  陈秀芳. Research progress of large size SiC single crystal materials and devices.  Light science applications,  2023. 
• [25]  杨祥龙. 8 英寸导电型 4H-SiC 单晶的生长.  《人工晶体学报》,  2022. 
• [26]  李晓蒙. Correlation between the response performance of epitaxial graphene/ SiC UV-photodetectors and the number of carriers in graphene.  Carbon,  2021. 
• [27]  段鹏. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备.  《材料导报》,  2021. 
• [28]  段鹏. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond.  MATERIALS,  2019. 
• [29]  王鹤静. Micropipes in SiC Single Crystal Observed by Molten KOH Etching.  Materials,  2021. 
• [30]  段鹏. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备.  《材料导报》,  2021.