Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the Impacts of Layer Numbers and Channel Lengths
发布时间：2023-05-17 点击数：
所属单位：信息科学与工程学院
论文名称：Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the Impacts of Layer Numbers and Channel Lengths
发表刊物：5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
关键字：Manufacture;Transition metals;Calculation results;Channel length;Double-gate fets;Electrical equivalent;Field effect transistor (FETs);First principle calculations;Technology nodes;Transition metal dichalcogenides
第一作者：王菲
论文编号：1478205738357624834
字数：3
是否译文：否
发表时间：2021-04