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Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

发布时间：2023-09-23 点击数：

所属单位：信息科学与工程学院

论文名称：Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

发表刊物：ACS Applied Nano Materials

第一作者：桑鹏鹏

论文编号：20B90BA1DBF442D48ECB1D4D160C22A8

期号：6（8）

字数：3

是否译文：否

发表时间：2023-04

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李元 (副教授)

Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications