Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance
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所属单位：信息科学与工程学院
发表刊物：IEEE Transactions on Electron Devices
第一作者：桑鹏鹏
论文编号：D0A984E5782B41B8B74E42B88F33D2F8
期号：69
字数：3
是否译文：否
发表时间：2022-04-01
发表时间：2022-04-01
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