Impacts of atomistic surface roughness on electronic transport in n-type and ptype MoS2 field-effect transistors
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所属单位：信息科学与工程学院
发表刊物：JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
论文编号：7CBB8FBD3AEA4E0B8B27639F2A5CF3DC
期号：1
字数：2
是否译文：否
发表时间：2019-10-22
发表时间：2019-10-22
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