On a Mott formalism for modeling oxide thin-film transistors
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所属单位：信息科学与工程学院
发表刊物：APPLIED PHYSICS LETTERS
第一作者：伊光政
论文编号：3D0DCCE5AB5B460DA99251607B001C83
卷号：125
期号：3
字数：4000
是否译文：否
发表时间：2024-07-15
发表时间：2024-07-15
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