A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN EnhancedType High-Electron-Mobility Transistor
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所属单位：信息科学与工程学院
发表刊物：ACS Applied Electronic Materials
论文编号：A9C470697EED43DBA18C90EFF3035EE1
卷号：6
期号：5
页面范围：3857
字数：5000
是否译文：否
发表时间：2024-05-16
发表时间：2024-05-16
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