教授
博士生导师
硕士生导师
性别：男
毕业院校：山东大学
学历：研究生(博士)毕业
学位：博士生
在职信息：在职
所在单位：微电子学院
办公地点：软件园校区
电子邮箱：songam@sdu.edu.cn
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[41]
辛倩.
Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes.
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王汉斌.
Two-Terminal InGaAs Microwave Amplifier.
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王珣珣.
Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction.
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李虎.
Sputtered Electrolyte-Gated Transistor with Modulated Metaplasticity Behaviors.
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Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors.
IEEE Transactions on Electron Devices,
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Yangming Fu.
Sputtered Electrolyte-Gated Transistor with Temperature Modulated Synaptic Plasticity Behaviors.
ACS Applied Electronic Materials,
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袁玉卓.
Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors.
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Electrically Switchable and Flexible Color Displays Based on All-Dielectric Nanogratings.
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High-Performance Thin-Film IGZO Schottky Diodes With Sputtered PdOx Anode.
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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel.
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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors.
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High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO.
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Multi frequency multi bit amplitude modulation of spoof surface plasmon polaritons by schottky diode bridged interdigital SRRs.
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Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes.
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Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes.
ACS Applied Materials & Interfaces,
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张嘉炜.
Extremely high-gain source-gated transistors.
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Electrical control of the optical dielectric properties of PEDOT:PSS thin films.
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张嘉炜.
Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V.
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68,
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袁玉卓.
Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO.
IEEE Electron Device Letters,
42,
62,
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屈云秀.
Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses.
Semiconductor Science and Technology,
26,
2018.
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