xiaohongdi
Professor
工学博士，教授，主要研究方向为宽带隙半导体材料与器件。主持国家自然科学基金项目2项，山东省科技攻关、山东省自然科学基金等省部级项目8项，申请国家发明专利5项，发表SCI收录论文百余篇，他引千余次；作为第一或通讯作者在Nanoscale、Applied Surface Science、Ceramics International、Applied Physics Letters等期刊发表SCI论文70余篇；受邀担任Advanced Materials，Applied Physics Letters，Applied Surface Science 等著名期刊的审稿人；获中国电子学会优秀硕士论文指导教... More+
Paper Publications
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[21] 刘杰. Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films a.... JOURNAL OF ALLOYS AND COMPOUNDS , 892, 2022.
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[22] 张彪. Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrate.... Ceramics International, 48, 4312, 2022.
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[23] 马瑾. Heteroepitaxial growth of the δ-Ta2O5 films on a-Al2O3(0001). Journal of Materials Science-Materials in Electronics, 2022.
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[24] 乐永. Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) subs.... MATERIALS LETTERS Journal, 302, 2021.
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[25] 乐永. Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) subs.... MATERIALS LETTERS Journal, 302, 2021.
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[26] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of re.... CRYSTENGCOMM, 23, 7245, 2021.
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[27] 肖洪地. Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films .... JOURNAL OF ALLOYS AND COMPOUNDS , 162069, 2021.
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[28] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of re.... CrystEngComm, 7245, 2021.
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[29] 王迪. Ta-doped epitaxial beta-Ga2O3 films deposited on SrTiO3(100) substrates by MOCVD. Materials Science in Semiconductor Processing, 128, 2021.
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[30] 刘杰. Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors. CERAMICS INTERNATIONAL Journal, 47, 22693, 2021.
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[31] 乐永. Synthesis and characterization of single-crystalline delta-Ta2O5 epitaxial films on Y-stabilized .... Ceramics International, 47, 5510, 2021.
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[32] 王迪. Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) .... Journal of Materials Science: Materials in Electronics, 32, 2757, 2021.
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[33] 肖洪地. Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial f.... Ceramics International, 9597, 2021.
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[34] 赵冲冲. Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN.... VACUUM Journal, 182, 2020.
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[35] 何林安. Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 film.... Optical materials, 108, 2020.
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[36] 刘杰. Investigation of the CdS quantum dot sensitized solar cells based on a series of zinc titanium mi.... Optical materials, 107, 2020.
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[37] 王迪. Preparation and properties of heteroepitaxial beta-Ga2O3 films on KTaO3 (100) substrates by MOCVD. MATERIALS CHARACTERIZATION Journal, 165, 2020.
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[38] 刘杰. Fabrication and applications of wafer-scale nanoporous GaN near-infrared distributed Bragg reflec.... Optical materials, 107, 2020.
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[39] 张宇. Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications. RSC advances, 23341, 2020.
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[40] 魏斌. Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications. RSC ADVANCES, 10, 23341, 2020.