Title of Paper:Improved On/Off Current Ratio and Linearity of InAlN/GaN HEMTs with N2O Surface Treatment for Radio Frequency Application

Journal:ECS Journal of Solid State Science and Technology

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Tzu-Yi Yang,Jie Zhang,Yu-Lun Chueh

Volume:10

Page Number:065013

DOI Number:10.1149/2162-8777/ac08dc

Translation or Not:No

Date of Publication:2021-06

Included Journals:SCI

Release Time:2021-11-27