Paper Publications
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
-
Journal:
Solid-State Electronics
-
First Author:
Peng Cui
-
Correspondence Author:
Yuping Zeng
-
Volume:
185
-
Page Number:
108137
-
Translation or Not:
no
-
Included Journals:
SCI