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Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Release Time:2021-11-27| Hits:

Title of Paper:Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Journal:Solid-State Electronics

First Author:Peng Cui

Correspondence Author:Yuping Zeng

Volume:185

Page Number:108137

DOI Number:10.1016/j.sse.2021.108137

Translation or Not:No

Date of Publication:2021-06

Included Journals:SCI

Release Time:2021-11-27

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