Paper Publications
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
  • Journal:
    Solid-State Electronics
  • First Author:
    Peng Cui
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    185
  • Page Number:
    108137
  • Translation or Not:
    no
  • Included Journals:
    SCI
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