Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation
Affiliation of Author(s):
新一代半导体材料研究院
Journal:
Nanomaterials
First Author:
Peng Cui
Correspondence Author:
Yuping Zeng
Document Code:
94EFCD5D27CD41A5B6B31827FE9E2A2F
Issue:
12
Page Number:
1718
Number of Words:
3000
Translation or Not:
no
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