iwM0yMHm6LDeAMJLT8xJGtPg7nNu8VEeeXLqjLcsQB3WB4oL5Z2a5EZyu6vl

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Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation

Release Time:2022-05-28| Hits:

Institution:新一代半导体材料研究院

Title of Paper:Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation

Journal:Nanomaterials

First Author:Peng Cui

Correspondence Author:Yuping Zeng

Document Code:94EFCD5D27CD41A5B6B31827FE9E2A2F

Issue:12

Page Number:1718

Number of Words:3000

Translation or Not:No

Date of Publication:2022-05

Release Time:2022-05-28

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