kbQ7M2AqdpHMhLR15OD1OTEnSJ52ZHVY39FFwuKOx4TKtke9RHdKSss4lQHj

Paper Publications

Home >> Scientific Research >> Paper Publications

Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor

Release Time:2021-11-30| Hits:

Title of Paper:Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor

Journal:2021 Device Research Conference (DRC)

First Author:Jie Zhang

Correspondence Author:Yuping Zeng

All the Authors:Lincheng Wei,Meng Jia,Peng Cui

Page Number:1-2

Translation or Not:No

Date of Publication:2021-06

Release Time:2021-11-30

Prev One:
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
Next One:
HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --