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Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Release Time:2021-11-27| Hits:

Title of Paper:Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Journal:Journal of Physics D: Applied Physics

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Jie Zhang,Tzu-Yi Yang,Hang Chen,Haochen Zhao,Guangyang Lin,Lincheng Wei,John Q. Xiao,Yu-Lun Chueh

Volume:53

Issue:6

Page Number:065103

DOI Number:10.1088/1361-6463/ab5728

Translation or Not:No

Date of Publication:2019-12

Included Journals:SCI

Release Time:2021-11-27

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Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer
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The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

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