Paper Publications
Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
  • Journal:
    Journal of Physics D: Applied Physics
  • All the Authors:
    Jie Zhang,Tzu-Yi Yang,Hang Chen,Haochen Zhao,Guangyang Lin,Lincheng Wei,John Q. Xiao,Yu-Lun Chueh
  • First Author:
    Peng Cui
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    53
  • Issue:
    6
  • Page Number:
    065103
  • Translation or Not:
    no
  • Included Journals:
    SCI
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