Paper Publications
Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
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Journal:
Journal of Physics D: Applied Physics
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All the Authors:
Jie Zhang,Tzu-Yi Yang,Hang Chen,Haochen Zhao,Guangyang Lin,Lincheng Wei,John Q. Xiao,Yu-Lun Chueh
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First Author:
Peng Cui
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Indexed by:
Journal paper
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Correspondence Author:
Yuping Zeng
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Volume:
53
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Issue:
6
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Page Number:
065103
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Translation or Not:
no
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Included Journals:
SCI