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The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Release Time:2021-11-27| Hits:

Title of Paper:The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs

Journal:Journal of Physics D: Applied Physics

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Lincheng Wei,Guangyang Lin,Jie Zhang,Haochen Zhao

Volume:52

Issue:46

Page Number:465104

DOI Number:10.1088/1361-6463/ab39fc

Translation or Not:No

Date of Publication:2019-09

Included Journals:SCI

Release Time:2021-11-27

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High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg

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