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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Release Time:2021-11-29| Hits:

Title of Paper:Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Journal:Scientific reports

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Jianghui Mo,Chen Fu,Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou,Gang Dai

Volume:8

Page Number:9036

DOI Number:10.1038/s41598-018-27357-6

Translation or Not:No

Date of Publication:2018-06

Included Journals:SCI

Release Time:2021-11-29

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