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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
  • Journal:
    Scientific reports
  • All the Authors:
    Jianghui Mo,Chen Fu,Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou,Gang Dai
  • First Author:
    Peng Cui
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    8
  • Page Number:
    9036
  • Translation or Not:
    no
  • Included Journals:
    SCI
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