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Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal:Superlattices and Microstructures

Correspondence Author:Zhaojun Lin

All the Authors:Zhiqun Cheng,Yuanjie Lv,Chen Fu,Peng Cui,Yan Liu

Volume:120

Page Number:389

DOI Number:10.1016/j.spmi.2018.05.016

Translation or Not:No

Date of Publication:2018-08

Included Journals:SCI

Release Time:2021-11-29

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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

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