cNC9VfIbZcbs0gcJ5z6Ktsou1BzCrPS3eja7z0rkH4RCeNx4ajliEjB8X2z2

Paper Publications

Home >> Scientific Research >> Paper Publications

Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Study of the parasitic source resistance at the different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Journal:Chinese Physics B

First Author:Yan Liu

Correspondence Author:Zhaojun Lin

All the Authors:Ming Yang,Yu Huo,Ruilong Han,Chen Fu,Peng Cui,Yuanjie Lv

Volume:26

Issue:9

Page Number:097104

DOI Number:10.1088/1674-1056/26/9/097104

Translation or Not:No

Date of Publication:2017-01

Included Journals:SCI

Release Time:2021-11-29

Prev One:
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
Next One:
Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

中文    |   MOBILE Version   |   Login   |   SDU   

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click: Times

The Open Time: --

The Last Update Time: --