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Paper Publications
Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
  • Journal:
    Journal of Applied Physics
  • All the Authors:
    Yuanjie Lv,Chen Fu,Yan Liu
  • First Author:
    Peng Cui
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    122
  • Page Number:
    124508
  • Translation or Not:
    no
  • Included Journals:
    SCI
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