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Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Journal:Journal of Applied Physics

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Yan Liu,Chen Fu,Yuanjie Lv

Volume:122

Page Number:124508

DOI Number:10.1063/1.5005518

Translation or Not:No

Date of Publication:2017-09

Included Journals:SCI

Release Time:2021-11-29

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