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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Journal:Superlattices and Microstructures

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Chongbiao Luan,Zhihong Feng,Yuanjie Lv,Chen Fu,Yan Liu,Aijie Cheng,Huan Liu

Volume:100

Page Number:358

DOI Number:10.1016/j.spmi.2016.09.039

Translation or Not:No

Date of Publication:2016-12

Included Journals:SCI

Release Time:2021-11-29

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