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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
  • Journal:
    Superlattices and Microstructures
  • All the Authors:
    Huan Liu,Aijie Cheng,Yan Liu,Chen Fu,Yuanjie Lv,Zhihong Feng,Chongbiao Luan
  • First Author:
    Peng Cui
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    100
  • Page Number:
    358
  • Translation or Not:
    no
  • Included Journals:
    SCI
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