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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
  • Journal:
    IEEE Transactions on Electron Devices
  • All the Authors:
    Yuanjie Lv,Zhihong Feng,Wei Lin,Peng Cui,Yan Liu,Chen Fu
  • First Author:
    Ming Yang
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    63
  • Issue:
    10
  • Page Number:
    3908
  • Translation or Not:
    no
  • Included Journals:
    SCI
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