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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Release Time:2021-11-29| Hits:

Title of Paper:Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Journal:IEEE Transactions on Electron Devices

First Author:Ming Yang

Correspondence Author:Zhaojun Lin

All the Authors:Yuanjie Lv,Zhihong Feng,Wei Lin,Peng Cui,Yan Liu,Chen Fu

Volume:63

Issue:10

Page Number:3908

DOI Number:10.1109/TED.2016.2597156

Translation or Not:No

Date of Publication:2016-10

Included Journals:SCI

Release Time:2021-11-29

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