D90MrNrcxJYgkwi8pMluyXJ03j8WHFhhSc4xkqjjPibyF4KM0MankY4zWN0v

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Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

Release Time:2021-11-29| Hits:

Title of Paper:Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

Journal:Superlattices and Microstructures

First Author:Huan Liu

Correspondence Author:Zhaojun Lin,Aijie Cheng

All the Authors:Chongbiao Luan,Zhihong Feng,Yuanjie Lv,Chen Fu,Yan Liu,Peng Cui

Volume:103

Page Number:113

DOI Number:10.1016/j.spmi.2017.01.031

Translation or Not:No

Date of Publication:2017-01

Included Journals:SCI

Release Time:2021-11-29

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